中国集成电路杂志

中国集成电路杂志

《中国集成电路》、《郑州工业大学学报》。中国集成电路杂志《中国集成电路》杂志是由工信部主管，中国半导体行业协会主办的全国性专业电子刊物，因此是混合集成电路可投稿的核心期刊；郑州大学学报工学版创刊于1980年，原名《郑州工业大学学报》，是郑州大学主办的国内外公开发行的综合性学术期刊，双月刊，混合集成电路可以投稿至这个期刊。

cic 中国集成电路属于核心期刊吗

刊名： 中国集成电路
China Integrated Circuit
主办： 中国半导体行业协会
周期： 月刊
出版地：北京市
语种： 中文;
开本： 大16开
ISSN： 1681-5289
CN： 11-5209/TN

历史沿革：
现用刊名：中国集成电路
曾用刊名：集成电路设计
创刊时间：1994

不是核心期刊,只是普刊

集成电路应用杂志与电子技术哪个好

集成电路应用杂志。
1、集成电路应用杂志社10年期刊征稿经验，周期短，见刊快，赠样刊，快速出录用。
2、集成电路应用杂志立足于中国电子信息产业，面向电子系统制造商与方案设计公司，致力于满足技术管理人员对新技术、新方案以及市场信息的需求。

国内有哪些模拟集成电路方面的EI期刊

推荐《仪器仪表学报》，EI期刊，以下是该杂志的收录情况，希望有所帮助：

《仪器仪表学报》被以下数据库收录：

CA 化学文摘(美)(2014)

SA 科学文摘(英)(2011)

JST 日本科学技术振兴机构数据库(日)(2013)

EI 工程索引(美)(2016)

CSCD 中国科学引文数据库来源期刊（2017-2018年度）（含扩展版）

北京大学《中文核心期刊要目总览》来源期刊：

1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版,2011年版,2014年版;

功率半导体器英文翻译

The power semiconductor device and the micro electron
power semiconductor device is in the semiconductor device important link, it and the micro electron component relations is close, because the micro electron component required power semiconductor device forms a complete set provides its power source and the execution develops rapidly computer, when CPU from 286,486, to gallops I, II, III, IV…When development, to took the power source the power semiconductor request increasingly is also example the present is developing the voltage to be smaller than 1 volt, on the electric current hundred amperes power sources, this must develop the newest MOSFET component to be able to meet the order to achieve these renew unceasingly the performance index, the power semiconductor device must use the micro electron component similar fine will also be this article is detailed narrates.
The power semiconductor device and the integrated circuit close union, in the one has arranged in order four aspects in the chart: Namely
1) power and micro electron component in chip manufacture craft already day by day close: The power MOS component in order to achieve a better performance, for example requests to pass condition the resistance lowly, its craft already from 20 year ago several microns technologies rapidly to submicron even deep submicron and the micro electron component development is consistent.
2) the MOS component seal technology is also approaching to the integrated for years, the power MOS component has used has inverted (Flip) likely, ball grid array (BGA) and packing forms and so on multi-chip module (MCM).These all are the quite new integrated circuit packing forms.

3) looked from the component structure that, makes the power MOS component and the integrated circuit in the identical chip perhaps the identical packing, is one of recent development ore the power semiconductor device equates simply for established separately the component no longer to be the IR Corporation product as the example, the power integrated circuit, perhaps and IC does in the same place power component, as well as the special advanced component, held its product one above the half.
4) the comprehensive solution (Total Solution) is each kind of component finally the component the function integrity, in the solution application all questions is the component manufacturer's the integrated circuit to enter the power semiconductor device, this kind of comprehensive solution plan was easier to only to the low power direction is so, even the high efficiency direction is also pursuing a greater integration rate and the comprehensive nly, contains all functions by a component not necessarily forever is the preferred example must consider the rate of finished products the loss, but also must pay attention to the protection customer to develop the electric circuit on own initiative the enthusiasm.