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Thereforepotentialsputteringmorelikelylowerelectronmobilitypioneers’workmostlyfocusedsemiconductors[9-12]newsputteringphenomenawerefoundcopper(Cu)HCI.Briefauthorintroduction:王铁山（1962），男，教授，研究方向：高电荷态离子与固体表面相互作用；低能核反应的研究；高放废物…
摘要：AsputteringtargetisprovidedthatincludesSiCandmetallicSiandhasanatomicratioofCtoSioffrom0.5to0.95andadensityoffrom2.75×103kg/m3to3.1×103kg/m3.Thesputteringtargetiscapableofformingathighspeedafilmthatcontains...
SputteringsystemswithmagneticallyenhancedionizationforionplatingofTiNfilms.ThereactivesputteringofhardcoatingsasTiNinlargedistancesand/oronlargesubstratesisdifficulttoperformwiththeconventionalmagnetron.Astrongmagneticconfinementofplasmabetweenthemagnetrontargetandsubstratesenhancesthegas...
论文查重优惠论文查重开题分析单篇购买文献互助用户中心UseofDCmagnetronsputteringsystems...EHLee，JKim展开摘要：Field-enhancedsputteringtargetsaredisclosedthatinclude:acorematerial;andasurfacematerial,whereinatleast...
Theeffectofsputteringpoweroncrystallinestructure,morphology,opticalandelectricalpropertiesoftheZTOfilmwassystematicallystudied.XRDresultsshowedthattheas-depositedZTOthinfilmshadahexagonalwurtzitestructure,with(002)orientation.
物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文推荐引用方式GB/T7714YI,HR,WANG,RI,Li,HC,etal.INSITUEPITAXIAL-GROWTHOFTHEGDBA2CU3O7SUPERCONDUCTINGTHIN-FILMSON(100)ZRO2BYMAGNETRONSPUTTERING
论文查重优惠论文查重开题分析单篇购买文献互助用户中心PowerSourceArrangementForMultiple-TargetSputteringSystem...Anarrangementforconcurrentlypoweringapluralityofsputteringsources.ApowersupplyiscoupledtoachargeTheduty...
Chapter64MRCSputteringSystemwithSputter-Etch：64章系统MRC..Chapter6.4MRCSputteringSystemSputter-Etch(mrc944)(584)1.0EquipmentPurpose1.1load-locked5kHzpulsed-DCsputtersystemsputteretchcapability.Fourdifferentmaterialsanygiventime.PLCcontrolledautomationsystemallowspallet-to-palletcontinuousoperation...
【Bookname】ThinFilmsMaterialTechnology:SputteringofCompoundMaterials【Publisher】Springer【Bookdescription】Aninvaluableresourceforindustrialscienceandengineeringnewcomerstosputterdepositiontechnologyinthinfilmproduction...
TheeffectofsputterpressureonthecrystallinityandmorphologyaswellasthephotodetectorperformanceofWO3filmsisstudied.Here,thethicknessoftheWO3filmsisdecreasedfrom225nmto95nmasthesputterpressureisincreasedfrom10mTorrto20mTorrduetothelowdepositionrateuponaccumulationofargonions.
2.高利用率等离子体溅射(HighTargetUtilizationPlasmaSputtering(HiTUS))源??HiTUS高利用率等离子体溅射源是一种崭新又古典的溅射源。他实际上是由利用射...
磁控溅射铝薄膜毕业论文目录第1章绪论....11.1引言....11.1.2薄膜研究的发展概况...11.1.3薄膜的方法...41.1.4薄膜的特征...
[10]KoH,TaiWP,KimKC,etal.GrowthofAl-dopedZnOthinfilmsbypulsedDCmagnetronsputtering[J].JournalofCrystalGrowth,2005,277(1-4):352-358...
磁控溅射类金刚石薄膜的研究(光学工程专业优秀论文)
KeywordsMagnetronsputtering;ICmetallization;Depositionrateandinfluencingfactors;Optimumprocessconditions目录TOC\o"1-3"\h\z\uHYPE...
Cunder300Pa,thedepthofalloyinglayerandnickelcontentonsurfaceare58ttmand67.1%respectivelyoncopper,but47Ⅲnand74.9%onA3lowCarbonsteel.KeyWords:nickelme...
要求呢？？？ .new-pmd.c-abstractbr{display:none;}更多关于sputtering论文的问题>>
ronsputteringtechniquepossessesgoodqualities,suchashighpurity,pactness,controllabilityandexcellentadhesion.ronsputteringtechniqueiswidelyusedtoprepar...
KeywordsMagnetronsputtering;ICmetallization;Depositionrateandinfluencingfactors;Optimumprocessconditions目录TOC\o"1-3"\h\z\uHYPERLINK\l"_Toc219261...
Keywords:antalumnitridefilmreactivemagnetronsputteringsheetresistancetemperaturecoefficientofresistanceClicktofold点击收起基金:论文图...