半导体的应用英语小论文

First, semiconductor laser based on the theoryAlthough some literature that the author created in their respective semiconductor lasers in the important role played by, but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconductor laser All the technology issues. Therefore, it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of wisdom.As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconductor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconductor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconductor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconductor lasers, he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconductor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs, InP, etc.) than the indirect bandgap semiconductor (such as Ge, Si, etc.) is more suited to produce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconductor laser.1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of theory.To sum up, in theory, that should be in the semiconductor laser direct bandgap semiconductor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.

希望能帮到你：Power semiconductor devices and power electronics World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics. According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only. At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society. The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices. The development of power semiconductor devices in three stages The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

Power semiconductor devices and power electronics World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics. According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only. At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society. The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices. The development of power semiconductor devices in three stages The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.