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Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemicalvapor deposition作者:Wang, BZ (Wang Bao-Zhu)[ 1,2,4 ] ; Zhang, XQ (Zhang Xiu-Qing)[ 1 ] ; Zhang, AD (Zhang Ao-Di)[ 1 ] ; Zhou, XR (Zhou Xiao-Ran)[ 1 ] ; Kucukgok, B(Kucukgok, Bahadir)[ 2 ] ; Na, L (Na Lu)[ 3 ] ; Xiao, HL (Xiao Hong-Ling)[ 4 ] ; Wang, XL (Wang Xiao-Liang)[ 4 ] ; Ferguson, IT (Ferguson, Ian T)[ 2 ]ACTA PHYSICA SINICA卷: 64 期: 4文献号: 047202DOI: 7498/047202出版年: FEB 20 2015查看期刊信息摘要The GaN thin films with different doping concentrations are grown by metal organic chemical vapor Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier The conductivity of GaN thin film increases with the increase of carrier The Seebeck coefficient of GaN thin film varies from 100 to 500 mu V/K, depending on carrier The highest power factor is 72 x 10(-4) W/mK(2) when the carrier concentration is 60 x 10(18) cm(-3) The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0025 when the carrier concentration is 60 x 10(18) cm(-3)关键词作者关键词:GaN thin films; thermoelectric properties作者信息通讯作者地址: Wang, BZ (通讯作者)Hebei Univ Sci & Technol, Schoole Informat Sci & Engn, Shijiazhuang 050018, Peoples R C    地址:[ 1 ] Hebei Univ Sci & Technol, Schoole Informat Sci & Engn, Shijiazhuang 050018, Peoples R China    [ 2 ] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA    [ 3 ] Univ N Carolina, Dept Engn Technol, Charlotte, NC 28223 USA    [ 4 ] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China    电子邮件地址:基金资助致谢基金资助机构授权号National Natural Science Foundation of China     61076052    Natural Science Foundation of Hebei Province, China     F2013208171    查看基金资助信息   出版商CHINESE PHYSICAL SOC, P O BOX 603, BEIJING 100080, PEOPLES R CHINA类别 / 分类研究方向:PhysicsWeb of Science 类别:Physics, Multidisciplinary文献信息文献类型:Article语种:Chinese入藏号: WOS:000351281500046ISSN: 1000-3290期刊信息Impact Factor (影响因子): Journal Citation Reports®其他信息IDS 号: CD7PAWeb of Science 核心合集中的 "引用的参考文献": 17Web of Science 核心合集中的 "被引频次": 0