电容特性研究论文

电容具有通高频阻低频，通交流隔直流的作用，所谓的通交流隔直流是指电容只能让交流电通过，而直流电不能通过。所谓通高频阻低频是指电容对高频交流电的阻碍作用小，而对低频交流电的阻碍作用大，电容对交流电的阻碍作用称为容抗。在容量一定的情况下交流电的频率越低，容抗越大，交流电的频率越高，容抗就越小，所以说电容具有通高频阻低频的作用。当交流电的频率为0时，电容的容抗无穷大，故电容具有通交流隔直流的作用。在频率一定的情况下，电容容量越大，则容抗就越小，电容容量越小则容抗越大。所以低频电路中的耦合电容、旁路电容的容量要比高频电路中选的大。

电容器是一种能储存电荷的容器。它是由两片靠得较近的金属片，中间再隔以绝缘物质而组成的。电容器对直流电阻力无穷大，即电容器具有隔直流作用.电容器对交流电的阻力受交流电频率影响，即相同容量的电容器对不同频率的交流电呈现不同的容抗。为开么会出现这些现象呢？这是因为电容器是依靠它的充放电功能来工作的，电源开关未合上时．电容器的两片金属板和其它普通金属板—样是不带电的。当开关合上时，电容器正极板上的自由电子便被电源所吸引，并推送到负极板上面。由于电容器两极板之间隔有绝缘材料，所以从正极板跑过来的自由电子便在负极板上面堆积起来。正极板便因电子减少而带上正电，负极板便因电子逐渐增加而带上负电。电容器两个极板之间便有了电位差，当这个电位差与电源电压相等时，电容器的充电就停上了。此时若将电源切断，电容器仍能保持充电电压。对已充电的电容器，如果我们用导线将两个极板连接起来，由于两极板间存在的电位差，电子便会通过导线，回到正极板上，直至两极板间的电位差为零。电容器又恢复到不带电的中性状态，导线中也就没电流了。电容器的放电过程：加在电容器两个极板上的交流电频率高，电容器的充放电次数增多；充放电电流也就增强；也就是说，电容器对于频率高的交流电的阻碍作用就减小，即容抗小，反之电容器对频率低的交流电产生的容抗大。对于同一频率的交流电电。电容器的容量越大，容抗就越小，容量越小，容抗就越大。

This paper strain silicon MOS interface characteristics of system, in-depth at the common MOS strain silicon surface in gully device structure and established a bar pressure and trans layer between the minority carriers concentration of models. Based on this model, the paper studies the strain of capacitor voltage characteristic silicon MOS. The results show that the strain Si/relaxation SiGe heterojunction photonic bandgap sent on the electron and the formation of cavity restrictions, at ambient temperature, strain silicon MOS C V curve can run area one or trans area side of "bench" phenomenon, this "bench" phenomenon with strain Si/relaxation SiGe denotation layer of doping concentration the high frequency C strain silicon V experimental results, thoroughly discussed the strain Si/SiO2 system interface charge, points out its characteristics of interface is given, and the influence of the improvements. Finally, based on body silicon MOS high-frequency capacitance measurement method improvement and corrections, measured and calculated the strain Si/SiO2 interface interface state the device physics, was presented based on the strain simi-emperical silicon n - MOSFET trans channel electronic mobility model. The model considers the lattice, from change impurities, surface phonons, interface charge and interfacial rough, etc in gully mobility mechanism on the scattering of influence, and considers the trans electronic shielding effect, finally use of Matlab software are simulated, and the simulation results with experiments with a very good match.

电容的特性是通交流，隔直流。

电容，电容器的简称，是电子设备中大量使用的电子元件之一，广泛应用于隔直、耦合、旁路、滤波、调谐回路、能量转换、控制电路等方面。

电容是指容纳电场的能力。任何静电场都是由许多个电容组成，有静电场就有电容，电容是用静电场描述的。一般认为：孤立导体与无穷远处构成电容，导体接地等效于接到无穷远处，并与大地连接成整体。

在电容充电后关闭电源，电容内的电荷仍可能储存很长的一段时间。此电荷足以产生电击，或是破坏相连结的仪器。一个抛弃式相机闪光模组由 AA 干电池充电，看似安全，但其中的电容可能会充电到300V，300V 的电压产生的电击会使人非常疼痛，甚至可能致命。

abstractIn this paper, the interface characteristics of strained silicon MOS system, in-depth study. Common for the strained silicon surface channel MOS device structure, established a gate voltage and inversion layer carrier concentration among a small number of models. Through the analysis of this model to study the strained silicon MOS capacitance-voltage characteristics. The results show that the strain Si / relaxed SiGe heterojunction energy band differential would limit the formation of electrons and holes at room temperature, the CV curves of strained silicon MOS depletion region in the inversion region on one side or the side of a "Step "phenomenon, this"step "in the strain Si / relaxed SiGe epitaxial layer doping concentration changes. Strained silicon with the high-frequency CV results, in-depth discussion of the strain Si/SiO2 system interface charge, points out the characteristics of the interface also shows the improvement measures. Finally, through the bulk silicon MOS high-frequency capacitance measurement method improvement and correction, measured and calculated strain Si/SiO2 interface, the interface state density. On the basis of the device physics, a semi-empirical strained silicon n-MOSFET inversion channel electron mobility model. The model considers the lattice, ionized impurity, surface phonon, interface charge and interface roughness Scattering mechanisms on the channel mobility, and to consider the anti-shielding effect of electronic Finally, the simulation using Matlab software, simulation and experiment has a very good : Strained silicon MOS, Capacitance-Voltage, interface state, reliability

Pick toThis paper strain silicon MOS interface characteristics of system, in-depth at the common MOS strain silicon surface in gully device structure and established a bar pressure and trans layer between the minority carriers concentration of models. Based on this model, the paper studies the strain of capacitor voltage characteristic silicon MOS. The results show that the strain Si/relaxation SiGe heterojunction photonic bandgap sent on the electron and the formation of cavity restrictions, at ambient temperature, strain silicon MOS C V curve can run area one or trans area side of "bench" phenomenon, this "bench" phenomenon with strain Si/relaxation SiGe denotation layer of doping concentration the high frequency C strain silicon V experimental results, thoroughly discussed the strain Si/SiO2 system interface charge, points out its characteristics of interface is given, and the influence of the improvements. Finally, based on body silicon MOS high-frequency capacitance measurement method improvement and corrections, measured and calculated the strain Si/SiO2 interface interface state the device physics, was presented based on the strain simi-emperical silicon n - MOSFET trans channel electronic mobility model. The model considers the lattice, from change impurities, surface phonons, interface charge and interfacial rough, etc in gully mobility mechanism on the scattering of influence, and considers the trans electronic shielding effect, finally use of Matlab software are simulated, and the simulation results with experiments with a very good : strain silicon MOS C V characteristics interface state reliability